Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±4.5V,VDS=0V
±1
uA
VGS=±8V,VDS=0V
±10
uA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.4
0.6
1
V
Drain-Source On-State Resistance
VGS=4.5V, ID=6.5A
18
22
mΩ
VGS=2.5V, ID=5.5A
21
26
mΩ
VGS=1.8V, ID=5A
26
34
mΩ
Forward Transconductance
gFS
VDS=5V,ID=6.5A
7
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
1160
PF
Output Capacitance
Coss
200
PF
Reverse Transfer Capacitance
Crss
140
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
VDD=10V,ID=1A VGS=5V,RGEN=3Ω
6.5
nS
Turn-on Rise Time ?
tr
13
nS
Turn-Off Delay Time ?
td(off)
50
nS
Turn-Off Fall Time
tf
30
nS
Total Gate Charge
Qg
VDS=10V,ID=6.5A,
VGS=4.5V
10
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1
V
产品：苏州硅能供货总量：按订单产品价格：议定包装规格：按订单物流说明：议定交货说明：按订单
